Infineon IPA60R170CFD7 CoolMOS™ CFD7 Power MOSFET: Advanced Superjunction Technology for High-Efficiency Switching Applications

The Infineon IPA60R170CFD7 is a state-of-the-art Power MOSFET from the revolutionary CoolMOS™ CFD7 family, engineered to set new benchmarks in high-efficiency power conversion. Leveraging advanced superjunction (SJ) technology, this device is specifically designed to meet the escalating demands of modern switching power supplies, industrial drives, renewable energy systems, and automotive applications where efficiency, power density, and reliability are paramount.

At the core of this MOSFET's superior performance is its ground-breaking superjunction structure. This technology enables an exceptional reduction in on-state resistance (RDS(on)) while simultaneously minimizing switching losses and gate charge (Qg). The IPA60R170CFD7 boasts an ultra-low RDS(on) of just 170mΩ at a 600V drain-source voltage rating, a critical factor that directly translates into lower conduction losses and higher overall system efficiency. The significant reduction in gate charge further enhances its high-frequency switching capability, allowing designers to push the boundaries of switching frequency without incurring prohibitive losses. This leads to the development of smaller, lighter, and more compact power supplies with reduced heatsinking requirements.

Beyond raw switching performance, the CFD7 series introduces integrated fast body diode characteristics. This feature is a pivotal advancement for hard-switching topologies like power factor correction (PFC) and half-bridge circuits. The diode exhibits exceptional reverse recovery behavior (softness), drastically reducing reverse recovery losses (Qrr) and electromagnetic interference (EMI). This inherent diode robustness enhances the MOSFET's resilience in demanding switching scenarios, improving system reliability and simplifying circuit design.

Furthermore, the device demonstrates outstanding avalanche ruggedness and high dv/dt capability, ensuring operational stability under voltage spikes and harsh conditions. Its excellent thermal performance, facilitated by low thermal resistance, allows for effective heat dissipation, sustaining high power throughput.

ICGOOODFIND: The Infineon IPA60R170CFD7 CoolMOS™ CFD7 represents a significant leap in power semiconductor technology. It masterfully combines the benefits of advanced superjunction design with an optimized fast body diode, making it an ideal cornerstone for next-generation high-efficiency, high-power-density, and reliable switching applications.

Keywords:

Superjunction Technology, High-Efficiency Switching, Low RDS(on), Fast Body Diode, Avalanche Ruggedness