Microchip SST39SF010A-55-4C-NHE-T 1Mbit CMOS Flash Memory Device

Release date:2026-02-24 Number of clicks:177

Unveiling the Microchip SST39SF010A-55-4C-NHE-T: A Robust 1Mbit CMOS Flash Memory Solution

In the realm of embedded systems and legacy equipment, the demand for reliable, low-power, and high-performance non-volatile memory remains constant. The Microchip SST39SF010A-55-55-4C-NHE-T stands as a paragon within this segment, offering a proven architecture for a wide array of industrial, automotive, and consumer applications. This 1-megabit CMOS Flash memory device combines performance with durability, making it a cornerstone for system designers seeking dependable firmware storage.

Architected for efficiency, this device is organized as 128K x 8, a standard configuration that simplifies interfacing with common 8-bit microcontrollers. Its operation is powered by a single 4.5-5.5V power supply, aligning perfectly with the voltage requirements of numerous classic and modern digital systems. A key feature of this memory is its low power consumption, drawing only 10 mA (typical) during active read operations and slipping into a minimal standby current of just 2 µA, which is critical for power-sensitive designs.

Performance is guaranteed by its 55 ns maximum access time, denoted by the "-55" in its product code. This swift read capability ensures that even processors running at higher clock speeds can access code without introducing wait states, thereby maintaining optimal system performance. The device supports a familiar interface with standard control pins including Chip Enable (`CE`), Output Enable (`OE`), and Write Enable (`WE`), ensuring easy integration into existing designs.

Beyond basic storage, the SST39SF010A is engineered for resilience. It features a sector-erase architecture, allowing for flexible memory management by erasing specific 4 KByte sectors without affecting others. This is complemented by a block-erase function for clearing larger portions of memory or the entire chip. The built-in hardware data protection mechanisms safeguard against inadvertent writes. Crucially, it offers superior endurance, supporting a minimum of 100,000 write cycles per sector and featuring over 100 years of data retention.

The "NHE" suffix indicates a standard temperature range of -40°C to +85°C, qualifying it for industrial and extended environmental applications. Its package is a space-efficient 32-lead PLCC, suitable for automated assembly processes.

ICGOOODFIND: The Microchip SST39SF010A-55-4C-NHE-T is a highly reliable and efficient 1Mbit Flash memory solution. Its combination of fast access times, low power consumption, and robust data protection makes it an enduring and trusted choice for maintaining and upgrading a vast spectrum of electronic systems.

Keywords: CMOS Flash Memory, Low Power Consumption, 55 ns Access Time, Sector-Erase Architecture, Industrial Temperature Range

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