**HMC759LP3ETR: A 6 GHz to 26 GHz, GaAs pHEMT MMIC Low Noise Amplifier**

The relentless drive for higher data rates and greater bandwidth in modern communication, radar, and test & measurement systems places immense demand on the performance of RF signal chains. At the heart of these systems, the low-noise amplifier (LNA) plays a critical role, setting the stage for overall system sensitivity and dynamic range. The **HMC759LP3ETR** from Analog Devices stands as a premier solution, a **monolithic microwave integrated circuit (MMIC)** amplifier engineered to deliver exceptional performance across an extremely wide frequency spectrum from **6 GHz to 26 GHz**.

Fabricated on a **high-performance GaAs pHEMT** process, this amplifier is designed to provide **low noise figure and high gain** where it matters most. The pHEMT (pseudomorphic High Electron Mobility Transistor) technology is renowned for its superior electron mobility, which directly translates into excellent high-frequency performance, lower noise, and higher efficiency compared to traditional FETs. The HMC759LP3ETR typically achieves a remarkably **low noise figure of 2.0 dB** while offering a high **small-signal gain of 20 dB**, ensuring that weak signals are amplified significantly before the inherent noise of subsequent stages in the chain degrades the signal-to-noise ratio.

A key feature of this amplifier is its **exceptional linearity**. With an output IP3 of +26 dBm, the HMC759LP3ETR can handle strong interfering signals without generating significant intermodulation distortion, thereby preserving the integrity of the desired signal. This makes it an ideal choice for demanding applications like point-to-point radio links, satellite communication systems, and military electronic warfare (EW) and electronic countermeasure (ECM) systems where signal environments are dense and hostile.

Housed in a compact, RoHS-compliant 3x3 mm QFN leadless package, the component is suitable for high-density PCB designs. It requires a single positive supply between +3V and +5V, drawing a nominal 80 mA of current, which simplifies power supply design. The device is also internally matched to 50 Ohms at both input and output, reducing the need for external matching components and streamlining the board-level design process for engineers.

**ICGOOODFIND**: The HMC759LP3ETR is a state-of-the-art MMIC LNA that sets a high bar for performance in the K-Band and Ku-Band spectrum. Its combination of wide bandwidth, low noise figure, high gain, and robust linearity in a miniature package makes it an indispensable component for advancing next-generation high-frequency systems.

**Keywords**: **GaAs pHEMT**, **Low Noise Amplifier (LNA)**, **MMIC**, **6-26 GHz**, **High Linearity**