Infineon BSC190N12NS3GATMA1: A High-Performance OptiMOS 5 Power MOSFET for Advanced Switching Applications

In the realm of power electronics, efficiency, power density, and reliability are paramount. The Infineon BSC190N12NS3GATMA1 stands out as a premier solution, engineered to meet the rigorous demands of modern high-frequency switching applications. As part of Infineon's esteemed OptiMOS™ 5 family, this N-channel power MOSFET is designed to deliver exceptional performance in a compact package, making it an ideal choice for applications ranging from server and telecom power supplies to industrial motor drives and solar inverters.

Unmatched Efficiency and Power Density

A key highlight of the BSC190N12NS3GATMA1 is its extremely low figure-of-merit (R DS(on) Q G). With a maximum drain-source voltage (V DS) of 120 V and a continuous drain current (I D) of 190 A at 25°C, this MOSFET boasts an ultra-low on-resistance (R DS(on)) of just 1.9 mΩ (max). This minimal resistance directly translates to reduced conduction losses, allowing for higher efficiency operation. Furthermore, the device features superior switching characteristics thanks to its low gate charge (Q G) and output charge (Q oss). This enables faster switching speeds, which is critical for increasing the power density of systems by allowing for higher operating frequencies and the use of smaller passive components.

Robustness and Reliability for Demanding Environments

Built with Infineon's advanced silicon technology, the BSC190N12NS3GATMA1 is housed in a SuperSO8 package (PG-TDSON-8), which offers an excellent power-to-size ratio and enhanced thermal performance. The package's low thermal resistance ensures efficient heat dissipation, which is crucial for maintaining device reliability under high-stress conditions. The MOSFET is also 100% avalanche tested, guaranteeing ruggedness and the ability to handle unexpected voltage spikes often encountered in real-world applications. This combination of electrical and thermal performance makes it a highly robust component for mission-critical systems.

Optimized for Advanced Topologies

This OptiMOS 5 device is particularly well-suited for synchronous rectification in switch-mode power supplies (SMPS) and active OR-ing in redundant power architectures. Its fast body diode characteristics minimize reverse recovery losses, further enhancing overall system efficiency. Designers can leverage its performance to push the boundaries of power conversion, achieving efficiency targets that were previously difficult to meet, such as those required by 80 PLUS Titanium standards for server PSUs.

ICGOOODFIND Summary:

The Infineon BSC190N12NS3GATMA1 exemplifies the cutting edge of power MOSFET technology. It successfully balances the critical trade-offs between on-resistance, switching speed, and package size, offering designers a potent tool to create more efficient, compact, and reliable power electronics for the next generation of advanced switching applications.

Keywords:

Power MOSFET, OptiMOS 5, High-Efficiency, Synchronous Rectification, SuperSO8